Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400°C for through silicon via application-Reference-Cited by-同舟云学术

Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400°C for through silicon via application

Published:2014-01 Issue: Volume:550 Page:259-263
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Su Meiying,Yu Daquan,Liu Yijun,Wan Lixi,Song Chongshen,Dai Fengwei,Xue Kai,Jing Xiangmeng,Guidotti Daniel

Funder

National S&T Major project

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Three Dimensional System Integration-IC Stacking Process and Design;Papanikolaou,2011

2. 3D IC Stacking Technology;Kumar,2011

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