Residual stress and fracture in thick tetraethylorthosilicate (TEOS) and silane-based PECVD oxide films-Reference-Cited by-同舟云学术

Residual stress and fracture in thick tetraethylorthosilicate (TEOS) and silane-based PECVD oxide films

Published:2001-07 Issue:3 Volume:91 Page:373-380
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Zhang X.,Chen K.-S.,Ghodssi R.,Ayón A.A.,Spearing S.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference14 articles.

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5. R. Ghodssi, X. Zhang, K.-S. Chen, K.A. Lohner, S.M. Spearing, M.A. Schmidt, Residual stress characterization of thick PECVD oxide film for MEMS application, in: Proceedings of the 46th International Symposium of the American Vacuum Society, Seattle, WA, October 1999.

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