TEOS-PECVD system for high growth rate deposition of SiO2 films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference26 articles.
1. Plasma-enhanced chemical vapour deposition of thin films from tetraethoxysilane and methanol: optical properties and XPS analyses
2. Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds
3. Effects of O2- and N2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
4. Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 films using tetraethoxysilane
5. Cyclic plasma deposition of SiO2 films at low temperature (80 °C) with intermediate plasma treatment
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2. Intrinsic Thermomechanical Properties of Freestanding TEOS-SiO2 Thin Films Depending on Thickness;ACS Applied Electronic Materials;2024-07-05
3. Material characterization of silicon dioxide cladding for photonic devices;Oxide-based Materials and Devices XV;2024-03-15
4. Study on residual OH content in low-temperature Si oxide films after in situ post-deposition heating (PDH);Japanese Journal of Applied Physics;2023-12-20
5. Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET;npj 2D Materials and Applications;2023-02-07
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