Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer-Reference-Cited by-同舟云学术

Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer

Published:2020-03-04 Issue:3 Volume:2 Page:827-837
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Guo Jianwei¹²,Guo Shen¹²,Su Xiaoming¹²,Zhu Sheng¹²,Pang Yue³,Luo Wei¹²,Zhang Jianbing¹²^ORCID,Sun Huajun¹²,Li Honglang⁴,Zhang Daoli¹²^ORCID

Affiliation:

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074, PR China

2. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074, PR China

3. College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province 210093, PR China

4. National Center for Nanoscience and Technology (NCNST), 11 ZhongGuanCun BeiYiTiao, Haidian District, Beijing City 100190, PR China

Funder

Ministry of Education of the People's Republic of China

Natural Science Foundation of Hubei Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00006