Charge trapped CdS quantum dot embedded polymer matrix for a high speed and low power memristor-Reference-Cited by-同舟云学术

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Charge trapped CdS quantum dot embedded polymer matrix for a high speed and low power memristor

Published:2023 Issue:5 Volume:25 Page:3737-3744
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Betal Atanu¹^ORCID,Bera Jayanta¹^ORCID,Sharma Ashish²³^ORCID,Rath Arup K.²³^ORCID,Sahu Satyajit¹^ORCID

Affiliation:

1. Indian Institute of Technology Jodhpur, Department of Physics, Jodhpur, 342037, India

2. Council of Scientific and Industrial Research, National Chemical Laboratory, Pune, 411008, India

3. Academy of Scientific and Innovative Research, Ghaziabad, 201002, India

Abstract

High-quality CdS quantum dots embedded in the polymer matrix device showed extremely stable electrical switching behaviour.

Funder

Science and Engineering Research Board

Ministry of Education, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP05014E

Reference34 articles.

1. Nanoscale resistive switching memory devices: a review

2. CdSe Quantum Dot-Based Nanocomposites for Ultralow-Power Memristors

3. Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory

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