Affiliation:
1. Department of Molecular Science and Technology Ajou University Suwon Gyeonggi‐do 443–749 South Korea
2. Department of Chemical Engineering Myongji University Yongin 17058 South Korea
3. Department of Electrical and Computer Engineering Ajou University Suwon Gyeonggi‐do 443–749 South Korea
4. Samsung Advanced Institute of Technology (SAIT) Samsung Electronics 130 Samsung‐ro Yeongtong Suwon Gyeonggi‐do 446–712 South Korea
Abstract
AbstractThe surface of colloidal‐type quantum dots (QDs) is protected with surfactants to maintain their nanoscale size and dispersion in various solvents. Such protection is advantageous to the processability of the dots, but the surfactants also act as insulators, thereby adversely affecting the electrical properties of the resulting devices. Anion‐type molecular metal chalcogenide complexes (MCCs) have been developed as an alternative to these surfactants. However, anionic ligands limit the charges of the resulting QDs to negative values; thus, additional processes are required to compensate for these charges. Herein, this work prepares cationic‐type dimetal diselenium perchlorate MCCs (M2Se2(ClO4)2, M = Mn, Zn, and Sn) and applies them to stabilize colloidal QDs. The resulting M2Se2‐PbS QDs are then used to fabricate near‐infrared photodetectors (NIR‐PDs). The devices exhibit remarkably suppressed dark current densities (JD) of as low as 4.92 × 10−10 A cm−2 when compared with PDs based on 1,2 ethandithiol‐PbS (EDT‐PbS) (JD = 1.41 × 10−8 A cm−2). In addition, the devices exhibit a high responsivity of 0.07 A W−1 in response to 950 nm NIR light signals, as well as an excellent specific detectivity of 5.66 × 1012 Jones at 950 nm. Finally, this work fabricates hybrid‐type QD films using cationic and anionic MCC‐PbS QDs and obtains a high external quantum efficiency (EQE) of 13.1%.
Funder
National Research Foundation of Korea
Subject
Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science
Cited by
2 articles.
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