Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf0.5Zr0.5O2/TiN Capacitors
Author:
Affiliation:
1. Moscow Institute of Physics and Technology, Institutskii Lane 9, Dolgoprudny 141700, Russian Federation
Funder
Russian Science Foundation
Foundation of Perspective Investigations
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00511
Reference40 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Next generation ferroelectric materials for semiconductor process integration and their applications
3. Impact of different dopants on the switching properties of ferroelectric hafniumoxide
4. Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films
5. Stabilizing the ferroelectric phase in doped hafnium oxide
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