Developing Subthreshold-Swing Limit of PEALD In–Sn–Ga–O Transistor via Atomic-Scaled Sn Control-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Developing Subthreshold-Swing Limit of PEALD In–Sn–Ga–O Transistor via Atomic-Scaled Sn Control

Published:2022-11-14 Issue:11 Volume:4 Page:5608-5616
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lee Dong-Hyeon¹,Kim Dong-Gyu¹,Kim Minseok¹,Uhm Sanghoon²,Kim Taewon²,Kuh Bongjin²,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul04763, Republic of Korea

2. Samsung Electronics, Semiconductor R&D Center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do18448, Republic of Korea

Funder

Samsung

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01222

Reference42 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

3. In2Ga2ZnO7oxide semiconductor based charge trap device for NAND flash memory

4. Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters

5. Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 °C

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors;Nanotechnology;2024-08-14

2. Facile routes to enhance doping efficiency using nanocomposite structures for high-mobility and stable PEALD-ITGO TFTs;Applied Surface Science;2024-08

3. Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel;IEEE Transactions on Electron Devices;2024-05

4. Boosted growth rate using discrete reactant feeding method and novel precursor of indium oxide by atomic layer deposition;Applied Surface Science;2024-05

5. Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF4 reactive sputtering;Materials Science in Semiconductor Processing;2024-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3