Facile routes to enhance doping efficiency using nanocomposite structures for high-mobility and stable PEALD-ITGO TFTs
Author:
Funder
Ministry of Science, ICT and Future Planning
National Research Foundation of Korea
Samsung
Publisher
Elsevier BV
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5. Vertical channel-all-around (CAA) IGZO FET under 50 nm CD with high read current of 32.8 μA/μm (Vth + 1 V), well-performed thermal stability up to 120 ℃ for low latency, high-density 2T0C 3D DRAM application;Duan,2022
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