Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control-Reference-Cited by-同舟云学术

Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control

Published:2022-04-12 Issue:4 Volume:4 Page:1800-1806
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lee Jeongho¹²^ORCID,Jin Jidong¹^ORCID,Maeng Seohyun¹,Choi Gisang¹²,Kim Hayoung¹²^ORCID,Kim Jaekyun¹²

Affiliation:

1. Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15888, Republic of Korea

2. BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan 15588, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Korea Basic Science Institute

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00054

Reference31 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Metal oxide semiconductor thin-film transistors for flexible electronics

4. Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

5. Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications

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