Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors-Reference-Cited by-同舟云学术

Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

Published:2024-02-15 Issue:2 Volume:6 Page:1424-1433
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Roldán Juan B.¹^ORCID,Cantudo Antonio¹,Maldonado David¹²,Aguilera-Pedregosa Cristina¹,Moreno Enrique³,Swoboda Timm⁴,Jiménez-Molinos Francisco¹^ORCID,Yuan Yue⁵,Zhu Kaichen⁶,Lanza Mario⁵^ORCID,Muñoz Rojo Miguel⁴⁷^ORCID

Affiliation:

1. Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias. Avenida Fuentenueva s/n, 18071 Granada, Spain

2. IHP-Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany

3. CEMDATIC─E.T.S.I Telecomunicación, Universidad Politécnica de Madrid (UPM), 28040 Madrid, Spain

4. Department of Thermal and Fluid Engineering, Faculty of Engineering Technology, University of Twente, 7500 AE Enschede, The Netherlands

5. Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

6. MIND, Department of Electronic and Biomedical Engineering, Universitat de Barcelona, Martí i Franquès 1, E-08028 Barcelona, Spain

7. 2D Foundry, Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC, Madrid 28049, Spain

Funder

Ministerio de Ciencia e Innovaci?n

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01727

Reference56 articles.

1. Memristive technologies for data storage, computation, encryption, and radio-frequency communication

2. An N40 256K×44 embedded RRAM macro with SL-precharge SA and low-voltage current limiter to improve read and write performance

3. Industrially Applicable Read Disturb Model and Performance on Mega-Bit 28nm Embedded RRAM

4. A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range

5. 13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V

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