Compliance Current-Controlled Conducting Filament Formation in Tantalum Oxide-Based RRAM Devices with Different Top Electrodes-Reference-Cited by-同舟云学术

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Compliance Current-Controlled Conducting Filament Formation in Tantalum Oxide-Based RRAM Devices with Different Top Electrodes

Published:2020-04-08 Issue:4 Volume:2 Page:1154-1161
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lee Tae Sung¹^ORCID,Lee Nam Joo²,Abbas Haider¹^ORCID,Lee Hyun Ho³^ORCID,Yoon Tae-Sik⁴^ORCID,Kang Chi Jung²

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea

2. Department of Physics, Myongji University, Gyeonggi-do 17058, Republic of Korea

3. Department of Chemical Engineering, Myongji University, Gyeonggi-do 17058, Republic of Korea

4. Department of Material Science & Engineering, Myongji University, Gyeonggi-do 17058, Republic of Korea

Funder

Myongji University

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00128

Reference47 articles.

1. Memristor-The missing circuit element

2. Memristive devices and systems

3. Resistance switching memories are memristors

4. Nanoionics-based resistive switching memories

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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3. Crystal Structure, Stability, and Metal–Insulator–Metal Transitions in Tantalum Oxides: Implication for Memristive Devices;The Journal of Physical Chemistry C;2024-08-20

4. Design of Triphenylamine‐based D‐π‐A Systems for Efficient Ternary WORM Memory Devices;Chemistry – A European Journal;2024-08-09

5. Integration of IGZO-based memristor and Pt-based temperature sensor for enhanced artificial nociceptor system;Materials Today Nano;2024-08

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