Design of Triphenylamine‐based D‐π‐A Systems for Efficient Ternary WORM Memory Devices

Abstract

AbstractThe impact of various substituent moieties on the molecular framework of a conjugated D−A system in resistive switching memory property has been scrutinized through an array of novel D‐π‐A molecules. The synthesized molecules with triphenylamine (TPA) as the electron donor and dicyanovinylindanone (IC) as the electron acceptor demonstrated substantial non‐volatile WORM (Write‐Once Read‐Many) memory behaviour with appreciable ON/OFF current ratios up to 105 and a lowest recorded threshold voltage of −0.80 V. The well‐balanced combination of these potent electron donating and accepting units culminated in exceptional intramolecular charge transfer interactions and minimal band gap values (1.82–2.31 eV) for the molecules, as demonstrated by photophysical and electrochemical investigations. These factors, coupled with the thin‐film morphological studies, corroborated the superior performance of the fabricated devices. A longer retention time of 2000s and an endurance of 100 cycles mark the substantial stability of the memory devices. Moreover, conversion from binary to ternary WORM memory was achieved by the effective tuning of the electronic properties of the D−A systems by various substituent moieties. Molecular simulation studies revealed that the resistive switching phenomenon arises from a synergistic interplay of charge transfer and charge trapping processes within these D−A systems.