Low-Frequency Noise in Electric Double Layer InGaZnO Thin-Film Transistors Gated with Sputtered SiO2-Based Electrolyte-Reference-Cited by-同舟云学术

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Low-Frequency Noise in Electric Double Layer InGaZnO Thin-Film Transistors Gated with Sputtered SiO2-Based Electrolyte

Published:2019-06-15 Issue:6 Volume:1 Page:972-976
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ma Xiaochen¹²^ORCID,Zhang Jiawei¹,Cai Wensi¹,Wilson Joshua¹,Song Aimin¹³^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom

2. Institute for Display Device, BOE Technology Group Co. Ltd., No. 9 Dize Road, BDA, Beijing 100176, P. R. China

3. Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, P. R. China

Funder

Engineering and Physical Sciences Research Council

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00141

Reference36 articles.

1. Metal oxides for optoelectronic applications

2. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

3. Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated with Solution-Processed, Ultra-Thin AlxOy

4. Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric

5. Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

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1. Unveiled Influence of Sub‐gap Density of States on Low‐Frequency Noise in Si‐Doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?;Advanced Electronic Materials;2023-12-17

2. 1/f noise of short-channel indium tin oxide transistors under stress;Applied Physics Letters;2023-06-19

3. Improving the Electrical and Low‐Frequency Noise Performance of Ionic‐Liquid‐Gated ReS 2 Field‐Effect Transistor with Hexagonal Boron Nitride;physica status solidi (RRL) – Rapid Research Letters;2021-07-16

4. Present status of electric-double-layer thin-film transistors and their applications;Flexible and Printed Electronics;2021-07-08

5. Low-Frequency Noise Characteristics of Inkjet-Printed Electrolyte-Gated Thin-Film Transistors;IEEE Electron Device Letters;2021-06

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