Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated with Solution-Processed, Ultra-Thin AlxOy-Reference-Cited by-同舟云学术

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Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated with Solution-Processed, Ultra-Thin AlxOy

Published:2018 Issue: Volume: Page:1-1
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cai Wensi,Wilson Joshua,Zhang Jiawei,Park Seonghyun,Majewski Leszek,Song Aimin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/4357973/08540916.pdf?arnumber=8540916

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Towards sustainable, solution-processed organic field-effect transistors using cashew gum as the gate dielectric;Frontiers in Materials;2023-12-06

2. Rational selection of the oxygen source for atomic layer deposition Al2O3 insulators;Vacuum;2023-09

3. Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics;Applied Physics Letters;2023-04-17

4. Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al_xO_y dielectrics;Semiconductor Science and Technology;2023-02-17

5. Research on monolithic integrated driver of Micro LED;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

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