Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits-Reference-Cited by-同舟云学术

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Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

Published:2018-06-14 Issue:33 Volume:30 Page:1706364
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Liu Ao¹,Zhu Huihui¹,Sun Huabin¹,Xu Yong¹,Noh Yong-Young¹^ORCID

Affiliation:

1. Department of Energy and Materials Engineering; Dongguk University; 30 Pildong-ro, 1-gil, Jung-gu Seoul 04620 Republic of Korea

Funder

Ministry of Science, ICT and Future Planning

Center for Advanced Soft-Electronics

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201706364/fullpdf

Reference291 articles.

1. High-K materials and metal gates for CMOS applications

2. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

3. Cramming More Components Onto Integrated Circuits

4. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

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