Improving the Electrical and Low‐Frequency Noise Performance of Ionic‐Liquid‐Gated ReS 2 Field‐Effect Transistor with Hexagonal Boron Nitride
Author:
Affiliation:
1. College of Electronic and Information Engineering Shenzhen University Shenzhen 518060 P. R. China
2. School of Electronic Engineering Xidian University Xi'an Shaanxi 710071 China
Funder
National Natural Science Foundation of China
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100276
Reference17 articles.
1. Electronics based on two-dimensional materials
2. Electric Field Effect in Atomically Thin Carbon Films
3. MoS 2 transistors with 1-nanometer gate lengths
4. Structural phase transition in monolayer MoTe2 driven by electrostatic doping
5. Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures
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