Physics-based bias-dependent compact modeling of 1/<i>f</i> noise in single- to few-layer 2D-FETs-Reference-Cited by-同舟云学术

Physics-based bias-dependent compact modeling of 1/f noise in single- to few-layer 2D-FETs

Published:2023 Issue:14 Volume:15 Page:6853-6863
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Mavredakis Nikolaos¹^ORCID,Pacheco-Sanchez Anibal¹^ORCID,Alam Md Hasibul²^ORCID,Guimerà-Brunet Anton³⁴,Martinez Javier³,Garrido Jose Antonio⁵⁶,Akinwande Deji²^ORCID,Jiménez David¹

Affiliation:

1. Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain

2. Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78758, USA

3. Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Esfera UAB, Bellaterra, Spain

4. Centro de Investigación Biomédica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN), Madrid, Spain

5. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, Spain

6. ICREA, Pg. Lluis Companys 23, 08010 Barcelona, Spain

Abstract

A physics-based 1/f noise model, appropriate for circuit simulators, is for the first time proposed and experimentally validated for 2D-FETs. Extracted model parameters can lead to reliable comparisons between different 2D devices and dielectrics.

Funder

Ministerio de Ciencia, Innovación y Universidades

Agencia Estatal de Investigación

H2020 Marie Skłodowska-Curie Actions

European Regional Development Fund

Horizon 2020 Framework Programme

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00922J

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