Effects of Sensor Platform Scaling on Signal-to-Noise Ratio in the Resistor- and Horizontal Floating-Gate FET-Type Gas Sensors-Reference-Cited by-同舟云学术

Effects of Sensor Platform Scaling on Signal-to-Noise Ratio in the Resistor- and Horizontal Floating-Gate FET-Type Gas Sensors

Published:2023-11 Issue:11 Volume:70 Page:5845-5850
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shin Wonjun¹^ORCID,Koo Ryun-Han¹,Hong Seongbin¹^ORCID,Jung Gyuweon¹^ORCID,Jeong Yujeong¹,Lee Sung-Tae²^ORCID,Lee Jong-Ho¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea

2. School of Electronic and Electrical Engineering, Hongik University, Seoul, Republic of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10294316/10253650.pdf?arnumber=10253650

Reference28 articles.

1. In‐Memory‐Computed Low‐Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide

2. The Present and Future of Gas Sensors

3. Nature of the 1/f noise in graphene—direct evidence for the mobility fluctuation mechanism

4. Physics-based bias-dependent compact modeling of 1/f noise in single- to few-layer 2D-FETs

5. Effects of Electrode Structure on H₂S Sensing and Low-Frequency Noise Characteristics in In₂O₃-Based Resistor-Type Gas Sensors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Nanoribbon-Based Ion-Gated Lateral Bipolar Amplifier for Ion Sensing;IEEE Transactions on Electron Devices;2024-07