Effects of Electrode Structure on H2S Sensing and Low-Frequency Noise Characteristics in In2O3-Based Resistor-Type Gas Sensors-Reference-Cited by-同舟云学术

Effects of Electrode Structure on H₂S Sensing and Low-Frequency Noise Characteristics in In₂O₃-Based Resistor-Type Gas Sensors

Published:2022-04-01 Issue:7 Volume:22 Page:6311-6320
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Kim Donghee¹^ORCID,Shin Wonjun¹^ORCID,Hong Seongbin¹^ORCID,Jeong Yujeong¹,Jung Gyuweon¹^ORCID,Park Jinwoo¹,Lee Jong-Ho¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea

Funder

National Research Foundation of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/9745626/09721278.pdf?arnumber=9721278

Reference59 articles.

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3. Analysis of low-frequency noise in boron-doped polycrystalline silicon–germanium resistors

4. Low-frequency noise of integrated polysilicon resistors

5. An analytical model for 1/f noise in polycrystalline silicon thin films

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