Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2. i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Funder
China Postdoctoral Science Foundation
Science and Technology Commission of Shanghai Municipality
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00492
Reference35 articles.
1. Nonvolatile ferroelectric field-effect transistors
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3. Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers
4. Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer
5. Pyroelectric energy conversion with large energy and power density in relaxor ferroelectric thin films
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