Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Reference49 articles.
1. Shimojo, Y. et al. High-density and high-speed 128Mb chain FeRAM™ with SDRAM-compatible DDR2 interface. In Symposium on VLSI Technical Digest 218–219 (Japan Society of Applied Physics, 2009).
2. Kohlstedt, H. et al. Current status and challenges of ferroelectric memory devices. Microelectron. Eng. 80, 296–304 (2005).
3. Sharma, P. et al. Nonvolatile ferroelectric domain wall memory. Sci. Adv. 3, e1700512 (2017).
4. Jiang, J. et al. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. Nat. Mater. 17, 49–55 (2018).
5. Seidel, J. et al. Conduction at domain walls in oxide multiferroics. Nat. Mater. 8, 229–234 (2009).
Cited by
104 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献