Ultralow electric-field poling of LiNbO3 single-crystal devices

Abstract

The LiNbO3 (LNO) single crystal receives wide applications in nonvolatile memories, surface acoustic wave devices, and electro-optic modulators. However, engineering of antiparallel domain patterns within micrometer-sized devices generally requires a poling voltage more than a few thousands of volts. The high poling voltage could invoke dielectric breakdown. Here, we found an effective method to increase the local electric field significantly for domain nucleation at the interfaces of an etched LNO mesa in contact to two concave side electrodes, while the electric field across the protruding intra-electrode area can be lower by 10 times after the metal diffusion at the surface. Subsequent piezoresponse force microscopy mapping shows the nucleating domains to grow up through the entire intra-electrode area. This method is universal and analogous to other ferroelectric devices for the realization of low-voltage operations.