Applying the Wake-Up-like Effect to Enhance the Capabilities of Two-Dimensional Ferroelectric Field-Effect Transistors

Author:

Cheng Jie1ORCID,Yuan Jun-Hui2ORCID,Li Pei Yue3ORCID,Wang Jiafu2,Wang Yuan4,Zhang You Wei5ORCID,Zheng Yu1,Zhang Pan34

Affiliation:

1. The State Key Laboratory of Precision Manufacturing for Extreme Service Performance, School of Mechanical and Electrical Engineering, Central South University, Changsha 410073, China

2. Department of Physics, School of Science, Wuhan University of Technology, Wuhan 430070, China

3. National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, China

4. Institute of Microelectronics, State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Taipa 999078, Macau, China

5. MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China

Funder

Peking University

Central South University

Natural Science Foundation of??Hunan Province

Natural Science Foundation of Hubei Province

National Natural Science Foundation of China

Key Research and Development Program of Hunan Province of China

Publisher

American Chemical Society (ACS)

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