Electronic Band Structure of In-Plane Ferroelectric van der Waals β′-In2Se3-Reference-Cited by-同舟云学术

Electronic Band Structure of In-Plane Ferroelectric van der Waals β′-In2Se3

Published:2020-01-15 Issue:1 Volume:2 Page:213-219
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Collins James L.¹²³,Wang Chutian³⁴,Tadich Anton³⁵,Yin Yuefeng³⁴,Zheng Changxi¹²³^ORCID,Hellerstedt Jack¹²³^ORCID,Grubišić-Čabo Antonija¹²³^ORCID,Tang Shujie⁶,Mo Sung-Kwan⁶^ORCID,Riley John⁷,Huwald Eric⁷,Medhekar Nikhil V.³⁴^ORCID,Fuhrer Michael S.¹²³^ORCID,Edmonds Mark T.¹²³^ORCID

Affiliation:

1. School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia

2. Monash Centre for Atomically Thin Materials, Monash University, Clayton, Victoria 3800, Australia

3. ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia

4. Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia

5. Australian Synchrotron, Clayton, Victoria 3168, Australia

6. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

7. Department of Physics, La Trobe University, Bundoora, Victoria 3086, Australia

Funder

Australian Research Council

Office of Science

International Synchrotron Access Program

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00699

Reference32 articles.

1. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

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4. Recent development of two-dimensional transition metal dichalcogenides and their applications

5. A ferroelectric semiconductor field-effect transistor

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