Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant
Author:
Affiliation:
1. Department of Electrical Engineering, Columbia University, New York, New York 10027, United States
2. Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
Funder
National Science Foundation
Center for Precision Assembly of Superstratic and Superatomic Solids
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00225
Reference30 articles.
1. Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology
2. Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
3. Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides
4. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
5. Hole Conduction of Tungsten Diselenide Crystalline Transistors by Niobium Dopant
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