Hole Conduction of Tungsten Diselenide Crystalline Transistors by Niobium Dopant-Reference-Cited by-同舟云学术

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Hole Conduction of Tungsten Diselenide Crystalline Transistors by Niobium Dopant

Published:2018-11-28 Issue:2 Volume:5 Page:1800695
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Chu Dongil¹^ORCID,Kim Eun Kyu¹^ORCID

Affiliation:

1. Quantum-Function Research Laboratory and Department of Physics; Hanyang University; Seoul 04763 South Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800695/fullpdf

Reference51 articles.

1. Electrical control of charged carriers and excitons in atomically thin materials

2. Selective control of electron and hole tunneling in 2D assembly

3. Multifunctional high-performance van der Waals heterostructures

4. Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures

5. P-Type Polar Transition of Chemically Doped Multilayer MoS2Transistor

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4. A high-performance logic inverter achieved using mixed-dimensional WSe₂/n⁺-Si and MoS₂/p⁺-Si junction field-effect transistors;Journal of Materials Chemistry C;2023

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