A high-performance logic inverter achieved using mixed-dimensional WSe2/n+-Si and MoS2/p+-Si junction field-effect transistors
Author:
Affiliation:
1. Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, South Korea
Abstract
Funder
Defense Acquisition Program Administration
Ministry of Science, ICT and Future Planning
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC02837B
Reference38 articles.
1. Vertical MoS2 transistors with sub-1-nm gate lengths
2. Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor
3. Ultrasensitive Photodetection in MoS 2 Avalanche Phototransistors
4. 2D MoTe2/ReS2 van der Waals Heterostructure for High-Performance and Linear Polarization-Sensitive Photodetector
5. Adaptive photocurrent generation of ReS2-2D Te heterostructure
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