Promises of Main-Group Metal Chalcogenide-Based Broken-Gap van der Waals Heterojunctions for Tunneling Field Effect Transistors
Author:
Affiliation:
1. College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People’s Republic of China
Funder
Natural Science Foundation of Guangdong Province
Natural Science Foundation of Shenzhen
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c01034
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1. Tunnel field-effect transistors as energy-efficient electronic switches
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5. Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities
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