Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities
Author:
Affiliation:
1. Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
Funder
Korea Evaluation Institute of Industrial Technology
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c10213
Reference292 articles.
1. Complementary tunneling transistor for low power application
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5. I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q
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