Affiliation:
1. Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China
Abstract
T(H)-TaS2/C3B metal–semiconductor heterostructures are constructed by different-phase T(H)-TaS2 monolayers combined with C3B monolayer, and their geometry, electronic structure, electrical contact properties, and control effects are studied deeply.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hunan Province
Publisher
Royal Society of Chemistry (RSC)