Low-Voltage Operation of ZrO2-Gated n-Type Thin-Film Transistors Based on a Channel Formed by Hybrid Phases of SnO and SnO2
Author:
Affiliation:
1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
Funder
National Science Council Taiwan
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b02941
Reference42 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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3. Enhanced performance of indium zinc oxide thin film transistor by yttrium doping
4. High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach
5. Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn–Sn–O thin film transistors
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