Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference44 articles.
1. A survey of wide bandgap power semiconductor devices;Millán;IEEE Trans. Power Electron.,2014
2. Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach;Chugh;Microelectron. J.,2023
3. GaN POWER 2021: EPITAXY, DEVICES, APPLICATIONS AND TECHNOLOGY TRENDS;Yole Development,2021
4. Gate injection transistor (GIT)—a normally-off AlGaN/GaN power transistor using conductivity modulation;Uemoto;IEEE Trans. Electron. Dev.,2007
5. Gate-bias induced RON instability in p-GaN power HEMTs;Chini;IEEE Electron. Device Lett.,2023
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献