ZnO-based Thin Film Transistors Employing Aluminum Titanate Gate Dielectrics Deposited by Spray Pyrolysis at Ambient Air-Reference-Cited by-同舟云学术

ZnO-based Thin Film Transistors Employing Aluminum Titanate Gate Dielectrics Deposited by Spray Pyrolysis at Ambient Air

Author:

Afouxenidis Dimitrios¹,Mazzocco Riccardo²,Vourlias Georgios³,Livesley Peter J.²,Krier Anthony²,Milne William I.⁴⁵,Kolosov Oleg²,Adamopoulos George¹

Affiliation:

1. Engineering Department, Lancaster University, Lancaster LA1 4YR, United Kingdom

2. Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom

3. Physics Department, Aristotle University of Thessaloniki, Thessaloniki 54142, Greece

4. Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

5. Display Research Laboratory, Department of Information Display, Kyung Hee University, Seoul 130701, South Korea

Funder

European Commission Directorate-General for Research and Innovation

Engineering and Physical Sciences Research Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference43 articles.

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