Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices-Reference-Cited by-同舟云学术

Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices

Published:2022-01-04 Issue:1 Volume:5 Page:791-800
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Vuong Phuong¹^ORCID,Sundaram Suresh¹²,Ottapilakkal Vishnu¹,Patriarche Gilles³,Largeau Ludovic³,Srivastava Ashutosh¹²,Mballo Adama¹^ORCID,Moudakir Tarik⁴,Gautier Simon⁴,Voss Paul L.¹²,Salvestrini Jean-Paul¹²^ORCID,Ougazzaden Abdallah¹²^ORCID

Affiliation:

1. Georgia Tech Lorraine, IRL 2958-CNRS, 57070 Metz, France

2. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

3. Centre de Nanosciences et de Nanotechnologies, C2N─Site de Marcoussis, Université Paris-Saclay, Route de Nozay, F-91460 Marcoussis, France

4. Institut Lafayette, 2 rue Marconi, 57070 Metz, France

Funder

French National Research Agency

French Renatech network and the ANR ?Investissement d?Avenir? program

Grand EST Region

Publisher

American Chemical Society (ACS)

Subject