Flow Modulation Epitaxy of Thick Boron Nitride Epilayers and Wafer-Level Exfoliation-Reference-Cited by-同舟云学术

Flow Modulation Epitaxy of Thick Boron Nitride Epilayers and Wafer-Level Exfoliation

Published:2024-01-03 Issue:2 Volume:24 Page:843-850
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Duo Yiwei¹²,Yang Qichao¹³,Wang Lulu¹²,Song Yijian¹²,Huo Ziqiang¹²,Ran Junxue¹²,Yang Jiankun¹²,Wang Junxi¹²^ORCID,Wei Tongbo¹²^ORCID

Affiliation:

1. Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

Funder

National Key Research and Development Program of China

Beijing Municipal Natural Science Foundation

National Natural Science Foundation of China

Beijing Science and Technology Planning Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c01309

Reference41 articles.

1. Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates

2. Hexagonal boron nitride: Epitaxial growth and device applications

3. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

4. Quasi van der Waals epitaxy nitride materials and devices on two dimension materials

5. Research Progress of Fast Response 2D Material Photodetectors with Metal-semiconductor-metal Structure

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