Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer-Reference-Cited by-同舟云学术

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Published:2014-08-26 Issue:42 Volume:24 Page:6629-6638
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Alaskar Yazeed¹²,Arafin Shamsul¹,Wickramaratne Darshana³,Zurbuchen Mark A.⁴⁵,He Liang¹,McKay Jeff⁴,Lin Qiyin⁶,Goorsky Mark S.⁴,Lake Roger K.³,Wang Kang L.¹⁴⁵

Affiliation:

1. Department of Electrical Engineering; University of California at Los Angeles; CA 90095 USA

2. National Nanotechnology Research Center; King Abdulaziz City for Science and Technology; Riyadh 11442 Saudi Arabia

3. Laboratory for Terahertz and Terascale Electronics; University of California at Riverside; CA 92521 USA

4. Department of Materials Science and Engineering; University of California at Los Angeles; CA 90095 USA

5. California NanoSystems Institute; University of California at Los Angeles; CA 90095 USA

6. Laboratory for Electron and X-ray Instrumentation; University of California at Irvine; CA 92697 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

2. Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

3. III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

4. GaAs, GaP, and GaAs1−xPx films deposited by molecular beam epitaxy

5. Fabrication and characterization of heterostructures with subnanometer thickness

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