Control of Grain Boundary Depletion Layer and Capacitance in ZnO Thin Film by a Gate with Electric Double Layer Dielectric-Reference-Cited by-同舟云学术

Control of Grain Boundary Depletion Layer and Capacitance in ZnO Thin Film by a Gate with Electric Double Layer Dielectric

Published:2015-12-01 Issue:49 Volume:119 Page:27813-27820
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Bisht Ravindra Singh¹,Ghimire Rishi Ram¹,Raychaudhuri A. K.¹

Affiliation:

1. Unit for Nanoscience, Department of Condensed Matter Physics & Material Sciences, S. N. Bose National Centre for Basic Sciences, Block-JD, Sector-III, Salt-Lake, Kolkata-700098, India

Funder

Third World Academy of Sciences

Department of Science and Technology, Ministry of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b08761

Reference30 articles.

1. Low-Temperature Sintering of In-Plane Self-Assembled ZnO Nanorods for Solution-Processed High-Performance Thin Film Transistors

2. Effect of Defects on the Behavior of ZnO Nanoparticle FETs

3. High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide

4. Electric double-layer transistors: a review of recent progress

5. Electron mobility variations in surface-charged indium tin oxide thin films

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