On the grain boundary charge transport in p-type polycrystalline nanoribbon transistors-Reference-Cited by-同舟云学术

On the grain boundary charge transport in p-type polycrystalline nanoribbon transistors

Published:2024 Issue:35 Volume:16 Page:16611-16621
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sarkar Prakash¹^ORCID,Muhammed Ali A. V.¹^ORCID,Ghorai Gurupada¹,Pradhan Prabhanjan²³,Patra Biplab K.²³^ORCID,Sagade Abhay A.⁴⁵^ORCID,Rao K. D. M.¹^ORCID

Affiliation:

1. School of Applied & Interdisciplinary Sciences, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India

2. Materials Chemistry Department, CSIR-Institute of Minerals and Materials Technology, Bhubaneshwar 751013, India

3. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India

4. Laboratory for Advanced Nanoelectronic Devices, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, SRM Nagar, Kattankulathur 603203, Tamil Nadu, India

5. Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), and Institute of Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany

Abstract

Quantitative analysis of grain boundaries and its influence on hole conduction through nanoribbon transistors is carried out by temperature dependent electrical measurements and analytical charge transport models.

Funder

Council of Scientific and Industrial Research, India

University Grants Commission

Science and Engineering Research Board

Alexander von Humboldt-Stiftung

SRM Institute of Science and Technology

Indian Association for the Cultivation of Science

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D4NR01873G

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4. Strong charge carrier scattering at grain boundaries of PbTe caused by the collapse of metavalent bonding

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