Low-Temperature Sintering of In-Plane Self-Assembled ZnO Nanorods for Solution-Processed High-Performance Thin Film Transistors
Author:
Affiliation:
1. Cavendish Laboratory, J. J. Thomson Avenue, Cambridge, CB3 0HE United Kingdom
2. Panasonic Europe Ltd., Panasonic R&D Centre of Europe, Cambridge Liaison Office, Cambridge, CB3 0AX United Kingdom
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp077740f
Reference24 articles.
1. ZnO-based transparent thin-film transistors
2. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
4. High-performance flexible zinc tin oxide field-effect transistors
5. Thin-film transistors with amorphous indium gallium oxide channel layers
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