First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe<sub>2</sub> and WSe<sub>2</sub>-Reference-Cited by-同舟云学术

First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe₂ and WSe₂

Published:2022-09-19 Issue:38 Volume:126 Page:16539-16545
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Qiu Chen¹²,Zhang Chen¹,Geng Songyuan²,Wang Fei³^ORCID,Deng Hui-Xiong¹^ORCID

Affiliation:

1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China

2. Beijing Computational Science Research Center, Beijing 100094, China

3. International Laboratory for Quantum Functional Materials of Henan, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China

Funder

Ministry of Science and Technology of the People's Republic of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c05131

Reference41 articles.

1. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers

2. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

3. Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

4. Lateral 2D WSe 2 p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance Optoelectronics

5. A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2

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