Lateral 2D WSe 2 p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance Optoelectronics-Reference-Cited by-同舟云学术

Lateral 2D WSe 2 p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance Optoelectronics

Published:2020-01-20 Issue:9 Volume:32 Page:1906499
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Sun Jiacheng¹,Wang Yuyan¹^ORCID,Guo Shaoqiang¹,Wan Bensong²,Dong Lianqing¹,Gu Youdi³,Song Cheng³,Pan Caofeng²,Zhang Qinghua⁴,Gu Lin⁴,Pan Feng³,Zhang Junying¹^ORCID

Affiliation:

1. Key laboratory of Micro‐nano MeasurementManipulation and Physics (Ministry of Education)School of PhysicsBeihang University Beijing 100191 China

2. Beijing Institute of Nanoenergy and NanosystemsChinese Academy of Sciences Beijing 100190 China

3. School of Materials Science and EngineeringTsinghua University Beijing 100084 China

4. Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of Sciences Beijing 100190 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201906499

Reference40 articles.

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5. Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics

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