Selectively Al2O3 Passivated WSe2/GaN Heterostructure for Ultralow-Noise High-Speed Broadband Photodetection-Reference-Cited by-同舟云学术

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Selectively Al₂O₃ Passivated WSe₂/GaN Heterostructure for Ultralow-Noise High-Speed Broadband Photodetection

Published:2024-08-07 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Sandhu Harmanpreet Kaur¹²,Khanikar Prabal Dweep¹³,John John Wellington¹,Sharma Abhishek²,Jain Alok²⁴,Das Samaresh¹^ORCID

Affiliation:

1. Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016, India

2. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110054, India

3. University of Queensland−IIT Delhi Academy of Research (UQIDAR), Hauz Khas, New Delhi 110016, India

4. Centre for Personnel Talent Management, Metcalfe House, Delhi 110054, India

Funder

Science and Engineering Research Board

Ministry of Education, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01124

Reference65 articles.

1. Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

2. Photocurrent generation with two-dimensional van der Waals semiconductors

3. Efficiency enhancement in InGaN-based laser diodes using an optimized Al0.12Ga0.88N electron blocking layer

4. Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared

5. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

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