A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2-Reference-Cited by-同舟云学术

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A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2

Published:2015-08-21 Issue:37 Volume:27 Page:5534-5540
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Jin Youngjo¹²,Keum Dong Hoon¹²,An Sung-Jin¹²,Kim Joonggyu¹²,Lee Hyun Seok¹,Lee Young Hee¹²³

Affiliation:

1. Center for Integrated Nanostructure Physics (CINAP); Institute for Basic Science (IBS); Sungkyunkwan University; Suwon 440-746 South Korea

2. Department of Energy Science; Sungkyunkwan University; Suwon 440-746 South Korea

3. Department of Physics; Sungkyunkwan University; Suwon 440-746 South Korea

Funder

Korea government Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201502278/fullpdf

Reference40 articles.

1. Transferred wrinkled Al2O3 for highly stretchable and transparent graphene–carbon nanotube transistors

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

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