Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography-Reference-Cited by-同舟云学术

Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

Published:2018-06-22 Issue:29 Volume:122 Page:16704-16714
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Di Russo E.¹,Moyon F.¹,Gogneau N.²,Largeau L.²,Giraud E.³,Carlin J.-F.³,Grandjean N.³,Chauveau J. M.⁴,Hugues M.⁴,Blum I.¹^ORCID,Lefebvre W.¹,Vurpillot F.¹,Blavette D.¹,Rigutti L.¹^ORCID

Affiliation:

1. Normandie Université, GPM, UNIROUEN, INSA Rouen, CNRS, 76000 Rouen, France

2. Centre de Nanosciences et de Nanotechnologies, CNRS UMR 9001, Université Paris-Sud, Université Paris-Saclay, C2N—Orsay, 91405 Orsay Cedex, France

3. Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

4. Université Côte d’Azur, CNRS, CRHEA, 06560 Valbonne, France

Funder

Agence Nationale de la Recherche

European Regional Development Fund

Centre National de la Recherche Scientifique

Région Normandie

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b03223

Reference32 articles.

1. Characterizing Atomic Composition and Dopant Distribution in Wide Band Gap Semiconductor Nanowires Using Laser-Assisted Atom Probe Tomography

2. Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects

3. Atom Probe Tomography of a-Axis GaN Nanowires: Analysis of Nonstoichiometric Evaporation Behavior

4. Role of Photoexcitation and Field Ionization in the Measurement of Accurate Oxide Stoichiometry by Laser-Assisted Atom Probe Tomography

5. Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

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