Characterizing Atomic Composition and Dopant Distribution in Wide Band Gap Semiconductor Nanowires Using Laser-Assisted Atom Probe Tomography-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Characterizing Atomic Composition and Dopant Distribution in Wide Band Gap Semiconductor Nanowires Using Laser-Assisted Atom Probe Tomography

Published:2011-08-23 Issue:36 Volume:115 Page:17688-17694
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Agrawal Ravi¹,Bernal Rodrigo A.¹,Isheim Dieter²,Espinosa Horacio D.¹

Affiliation:

1. Department of Mechanical Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3111, United States

2. Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208-3108, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp2047823

Reference31 articles.

1. Nanowire electronic and optoelectronic devices

2. Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

3. Semiconductor nanowires

4. Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

5. Catalyst-free growth of GaN nanowires

Cited by 77 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography;Ultramicroscopy;2024-12

2. Significant Oxygen Underestimation When Quantifying Barium-Doped SrTiO Layers by Atom Probe Tomography;Microscopy and Microanalysis;2024-01-17

3. Is it meaningful to quantify vacancy concentrations of nanolamellar (Ti,Al)N thin films based on laser-assisted atom probe data?;Surface and Coatings Technology;2023-11

4. Microstructural Evolutions and Strengthening Mechanism according to the Aging Temperatures of a High Si Cast Aluminum Alloy;Korean Journal of Metals and Materials;2023-07-05

5. Surface Dynamics of Field Evaporation in Silicon Carbide;The Journal of Physical Chemistry C;2023-03-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3