Computational and Experimental Study of Ta2O5 Thin Films-Reference-Cited by-同舟云学术

Computational and Experimental Study of Ta2O5 Thin Films

Published:2017-01-03 Issue:1 Volume:121 Page:202-210
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Sathasivam Sanjayan¹²^ORCID,Williamson Benjamin A. D.³,Kafizas Andreas¹,Althabaiti Shaeel A.,Obaid Abdullah Y.,Basahel Sulaiman N.,Scanlon David O.³⁴^ORCID,Carmalt Claire J.¹,Parkin Ivan P.¹

Affiliation:

1. Materials Chemistry Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.

2. Bio Nano Consulting Ltd., The Gridiron Building, One Pancras Square, London N1C 4AG, U.K.

3. Kathleen Lonsdale Materials Chemistry, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.

4. Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, United Kingdom

Funder

King Abdulaziz University

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b11073

Reference81 articles.

1. Structural and Electrical Properties of Ta2O5Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source

2. Combining Ta[sub 2]O[sub 5] and Nb[sub 2]O[sub 5] in Bilayered Structures and Solid Solutions for Use in MIM Capacitors

3. Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source

4. High dielectric constant gate oxides for metal oxide Si transistors

5. Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films

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