Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source-Reference-Cited by-同舟云学术

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Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source

Published:1996-03-25 Issue:13 Volume:68 Page:1775-1777
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Devine R. A. B.,Vallier L.,Autran J. L.,Paillet P.,Leray J. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116663

Reference17 articles.

Cited by 66 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical conductivity of TaOx as function of composition and temperature;Journal of Non-Crystalline Solids;2023-10

2. Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in Ta 2 O 5 -Based Resistive Switching Devices;Physical Review Applied;2022-03-25

3. Characterization of argon etched Ta2O5 thin films;Applied Physics A;2019-11-08

4. Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film;Journal of Luminescence;2017-04

5. Computational and Experimental Study of Ta2O5 Thin Films;The Journal of Physical Chemistry C;2017-01-03

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