Photoerasable Organic Field-Effect Transistor Memory Based on a One-Step Solution-Processed Hybrid Floating Gate Layer-Reference-Cited by-同舟云学术

Photoerasable Organic Field-Effect Transistor Memory Based on a One-Step Solution-Processed Hybrid Floating Gate Layer

Published:2020-09-25 Issue:42 Volume:124 Page:23343-23351
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Li Qingyan¹^ORCID,Li Tengteng¹,Zhang Yating¹^ORCID,Chen Zhiliang¹^ORCID,Li Yifan¹^ORCID,Jin Lufan¹^ORCID,Zhao Hongliang¹,Li Jie¹,Yao Jianquan¹

Affiliation:

1. Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China

Funder

Ministry of Science and Technology of the People's Republic of China

Tianjin University

Department of Education of Guangdong Province

National Natural Science Foundation of China

Basic Research Program of Shenzhen

Wenzhou City

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c06880

Reference52 articles.

1. Photoinduced Recovery of Organic Transistor Memories with Photoactive Floating-Gate Interlayers

2. High‐Performance All‐Inorganic Perovskite‐Quantum‐Dot‐Based Flexible Organic Phototransistor Memory with Architecture Design

3. Synaptic Transistor Capable of Accelerated Learning Induced by Temperature-Facilitated Modulation of Synaptic Plasticity

4. Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates

5. Design of a Photoactive Hybrid Bilayer Dielectric for Flexible Nonvolatile Organic Memory Transistors

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