Intrinsically Stretchable Floating Gate Memory Transistors for Data Storage of Electronic Skin Devices-Reference-Cited by-同舟云学术

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Intrinsically Stretchable Floating Gate Memory Transistors for Data Storage of Electronic Skin Devices

Published:2024-05-18 Issue:22 Volume:18 Page:14558-14568
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Nam Tae Uk¹,Vo Ngoc Thanh Phuong¹,Jeong Min Woo¹,Jung Kyu Ho¹,Lee Seung Hwan²,Lee Tae Il³^ORCID,Oh Jin Young¹^ORCID

Affiliation:

1. Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi 17104, Korea

2. Department of Electronics Engineering, Kyung Hee University, Yongin, Gyeonggi 17104, Korea

3. Department of Materials Science and Engineering, Gachon University, Seong-nam, Gyeonggi 13120, Korea

Funder

National Research Foundation of Korea

Korea Institute for Advancement of Technology

Ministry of Trade, Industry and Energy

Gyeonggi province

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c02303

Reference42 articles.

1. Second Skin Enabled by Advanced Electronics

2. 25th Anniversary Article: The Evolution of Electronic Skin (E-Skin): A Brief History, Design Considerations, and Recent Progress

3. Stretchable transistors and functional circuits for human-integrated electronics

4. High-performance stretchable conductive nanocomposites: materials, processes, and device applications

5. Soft Bioelectronics Based on Nanomaterials

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Artificial nociceptor based on temperature responsive of synaptic transistor for electronic skin;Applied Materials Today;2024-10

2. Advances in Flexible, Foldable, and Stretchable Quantum Dot Light-Emitting Diodes: Materials and Fabrication Strategies;Korean Journal of Chemical Engineering;2024-07-30

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